Purion H6 next generation high current ion implanters deliver industry-leading process control by leveraging Axcelis’ proven spot beam architecture, optimized for the full spectrum of high-current applications. Its flexible design supports customization to meet the specific energy and dose requirements of your process. With unmatched versatility, superior throughput, and exceptional uniformity, Purion H6 maximizes yield while achieving the lowest cost of ownership.

Purity

Building on Axcelis’ production-proven, five-filter, scanned spot-beam architecture, the Purion H6 optimizes beamline design for next generation contamination control. Magnetic and electrostatic filtration coupled with optimized beamline optics, minimize particle generation, delivering industry-leading contamination control, and the lowest cost of ownership.

Precision

Purion H6 offers independent control of implant angles and dose, supported by the Purion Vector™ angle control system and advanced dose control technology. This ensures highly uniform dopant placement across the entire wafer through precise measurement and control of beam characteristics and both horizontal and vertical angles. The unique scanned spot-beam architecture also enables innovative damage engineering, giving customers greater control to fine-tune implant profiles and optimize device performance.

Productivity

Enhanced Uniformity Scan maximizes spot beam utilization for the highest beam current in the region of interest. Combined with the Purion 500 wph end station, Purion H Series sets the benchmark for productivity in high-current ion implantation.