RAPID THERMAL PROCESSING
The Summit XT is a single-wafer, hot-wall rapid thermal processing system that delivers inherently uniform, stable processing from <300°C to 1200°C. The system covers a broad range of advanced thermal processing needs for transistor formation in and beyond the 65nm technology node, including anneals for: ultra shallow junction formation, dry oxidation, nickel silicide, shallow trench isolation (STI) oxides and titanium nitride (TiN) densification.
- Hot-wall enabled process control. Unique hot-wall design combined with a patented temperature measurement system ensures exceptional long-term repeatability.
- Improves yield. Large area furnace-based heat source minimizes pattern driven within die non-uniformity that can drive down yield on advanced SOC designs.
- Benchmark reliability. Simple design delivers unmatched in-fab availability and process stability.
- Designed for productivity. With a throughput of 105 wafers per hour, the system maximizes productivity and lowers cost of ownership.
Visit the Technical Library >
Ultra Shallow Junction