The Optima HD is a high dose ion implanter that delivers precise and productive implants across a broad applications base, including source/drain, source/drain extension and poly-doping transistor forming applications.   The Optima HD is also available with Hydrogen and molecular implant capabilities. Broad Energy Coverage. 200eV to 80 KeV energy range provides significant mid-dose applications overlap for maximum versatility and capital efficiency. New Beamline. Industry leading spot beam technology enables precise dopant control resulting in the greatest control and consistency of any beam on the market today. Maximize Yield. Precise angle control ensures all points across the wafer see the same beam at the same angle - resulting in exceptional implant repeatability that maximizes yield. Unmatched Extendibility. Provides effective throughput for today's devices as well as sub-65 technology nodes.   Zero Energy Contamination. Using drift (or non-decel) mode with the lowest energy beams possible ensures no energy contamination
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