The Optima HD is a high dose ion implanter that delivers precise and productive implants across a broad applications base, including source/drain, source/drain extension and poly-doping transistor forming applications.   The Optima HD is also available with Hydrogen and molecular implant capabilities. Broad Energy Coverage. 200eV to 60 KeV energy range provides significant mid-dose applications overlap for maximum versatility and capital efficiency. Unique Beamline. Industry leading spot beam technology enables precise dopant control resulting in the greatest control and consistency of any beam on the market today. Zero Energy Contamination. Using drift (or non-decel) mode with the lowest energy beams possible ensures no energy contamination Maximize Yield. The unique RadiusScanTM endstation's cross wafer angle control results in industry leading implant uniformity and repeatability that maximizes yield. Unmatched Extendibility. Provides effective throughput for today's devices as well as sub-32nm technology nodes.
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