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The Optima HD is a high dose ion implanter that delivers precise and productive implants across a broad applications base, including source/drain, source/drain extension and poly-doping transistor forming applications. The Optima HD is also available with Hydrogen and molecular implant capabilities.
- Broad Energy Coverage. 200eV to 60 KeV energy range provides significant mid-dose applications overlap for maximum versatility and capital efficiency.
- Unique Beamline. Industry leading spot beam technology enables precise dopant control resulting in the greatest control and consistency of any beam on the market today.
- Zero Energy Contamination. Using drift (or non-decel) mode with the lowest energy beams possible ensures no energy contamination
- Maximize Yield. The unique RadiusScanTM endstation's cross wafer angle control results in industry leading implant uniformity and repeatability that maximizes yield.
- Unmatched Extendibility. Provides effective throughput for today's devices as well as sub-32nm technology nodes.
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