AXCELIS MARKS ANOTHER LOW ENERGY IMPLANT ADVANCE WITH CLUSTER BORON BEAMS  
New SemEquip source offers 18X boost in low energy productivity

BEVERLY, Mass. — May 24, 2005 — In a move to deliver a step-change improvement in low-energy beam currents, Axcelis Technologies, Inc. (NASDAQ: ACLS) today announced that it will integrate cluster boron source technology on select implant platforms.

The technology is seen as the most promising method of extending the viability of low energy implants, especially for the production of advanced ultra shallow junction (USJ) and dual poly gate (DPG) transistor structures. Cluster boron molecules contain 18 boron atoms and deliver the equivalent of an 18-fold increase in beam current at ultra low energy.  

"Axcelis is adopting cluster boron technology because it delivers superior throughput at low energy compared with tradition source technology, further extending Axcelis' unparalleled strength in critical low energy implant applications," said Mark Namaroff, Axcelis' senior vice president of marketing. "The technology also rivals the productivity of alternative plasma immersion techniques without introducing the process issues typically associated with non-mass analyzed plasma immersion, such as energy and species contamination, poor angle control and lack of tilt capability."  

Axcelis has been exploring molecular source technology as a potential candidate for extending low energy implant technology since the late 1990s. The company is using ClusterIon(TM) source technology from SemEquip, a manufacturer of ion sources and ion delivery systems for the OEM implanter market.

"We are very excited that the market leader in ion implant has agreed to implement our source technology," added Brian Cohen, chief executive officer for SemEquip. "ClusterIon technology is the perfect complement to Axcelis' low energy implant superiority, and we are eager to collaborate with them in delivering the technology on volume production tools."  

About Axcelis Technologies, Inc.
Axcelis Technologies, Inc., headquartered in Beverly, Massachusetts, provides innovative, high-productivity solutions for the semiconductor industry. Axcelis is dedicated to developing enabling process applications through the design, manufacture and complete life cycle support of ion implantation, rapid thermal processing, and cleaning and curing systems. Axcelis Technologies has key product development centers in Beverly, Massachusetts, as well as in Toyo, Japan through its joint venture, SEN. The company's Internet address is: www.axcelis.com.

Forward-Looking Statements
This press release includes certain statements, known as "forward-looking statements," which express the current expectations of Axcelis management. Product manufacturing and delivery issues, customer order push-outs or cancellations and product performance could cause actual results to differ materially from those currently anticipated as expressed in this press release. These risks and other risk factors relating to Axcelis are described more fully in the most recent Form 10-K filed by Axcelis and in other filings from time to time with the Securities and Exchange Commission.

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