Knowledge Center

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Exemplary Ion Source for the Implanting of Halogen and Oxygen Based Dopant Gases


By Tseh-Jen Hsieh and Neil K. Colvin
Axcelis Technologies, Inc. 

Beam Energy Purity on Axcelis XE High Energy Ion Implanter

By Shu Satoh and Jonathan David
Axcelis Technologies, Inc. 

5 Essential Upgrades for 200mm That You Should Consider Now

It has been a strong year for the 200mm implant market as growth in mobile applications and the Internet of Things drive demand for more capable and cost effective devices.  Many fabs are at capacity, and in search of upgrades that bring added productivity and performance. The solutions below deliver customer inspired upgrades for long term value. Our goal is to increase implanter productivity, precision and capability with the aim of reduced cost of ownership.

Ion Implantation for FinFET Devices

by Dr. Leonard Rubin, Chief Device Scientist
Axcelis Technologies, Inc.

FinFET devices were introduced in 2011 to replace planar field effect transistor (FET) devices beginning at the 22nm node (Figure 1) [1].  Following this, all core logic transistors were converted from planar to a FinFET architecture by the 16nm node in 2014 [2-4].  In its simplest form, a digital logic transistor acts as a switch.  The current flow between the source and drain terminals is either high or low depending on the controlling voltage applied to the gate.

Improved Ion Source Stability Using H2 Co-gas for Fluoride Based Dopants

by Tseh-Jen Hsieh and Neil Colvin
Axcelis Technologies, Inc., Beverly, MA


It has been shown [1] that the common fluoride compounds such as GeF4 and SiF4 used for pre-amorphization (PAI) species and BF3 as a source gas for B11 and BF2 P-type dopant create problems not only for ion source operation but also impact device performance.

Contamination Control in the Purion Platform Ion Implanters

by David A. Kirkwood, James Deluca, Jonathan David
Axcelis Technologies Inc., Beverly, MA

Damage Engineering on Purion XE High Energy Ion Implanter

By J. DeLuca, S. Satoh, H. Chen, T. Fox, S. Kondratenko and R. Reece
Axcelis Technologies, Inc.

Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile.

OptiScan, Beam Utilization Enhancement on the Purion XE

By: Shu Satoh, Chief Scientist
Axcelis Technologies

Among many semiconductor manufacturing processes, ion implantation seems to be the only process which does not benefit from the round shape of the wafer.  For many other processes, like anneal, etch, CVD, spin coating, CMP in device manufacturing and lapping and polishing in wafer fabrication, it is a real blessing that wafers are round.  

The Microwave Plasma Electron Flood

Marvin Farley, Vice President and CTO
Bo Vanderberg, Staff Scientist
Axcelis Technologies, Inc.

Defect Control - Designing for Process Cleanliness

By Dr. David Kirkwood, Senior Project Manager, Contamination Control,
Axcelis Technologies, Inc.

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